•Thickness Nu WiW ±2%
•Less Particle Design
•Good Step Coverage
•Small Footprint
•Lower Temp. Oxide
•Good Maintenability


  • Face down deposition in closed chamber by chucking wafer on heater above dispersion head realized good thermal uniformity to make good film thickness Nu, and less particle additions.
  • Backside Gas from the backside wafer prevent backside deposition and prevent extra SiO deposition on the wall of parts of chambers.
  • Minimized system footprint.
  • Low temp. process is available with O3 (150℃~350℃)